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auirf3805s-7p AUIRF3805L-7P hexfet ? power mosfet www.irf.com 1 pd - 96318 automotive grade

gds gate drain source hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ s d g

features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistanceper silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating.these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. v (br)dss 55v r ds(on) typ. 2.0m ? max. 2.6m ? i d 240a absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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" ! p arameter u n i ts i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (packa g e limited) i dm pulsed drain current p d @t c = 25c maximum power dissi p ation w linear derating factor w/c v gs gate-to-source voltage v e as sin g le pulse avalanche ener gy ( thermall y limited ) e as (t es t e d) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy m j dv/dt peak diode recover y dv/dt v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw th erma l r es i s t ance p arameter ty p. m ax. u n i ts r jc junction-to-case CCC 0.50 r cs case-to-sink, flat, greased surface 0.50 CCC r ja junction-to-ambient CCC 62 r ja junction-to-ambient ( pcb mount, stead y state ) CCC 40 10 lbfin (1.1nm) 300 2.0 20 440 680 see fi g .12a,12b,15,16 300 -55 to + 175 2.3 max. 240 170 1000 160 a c mj c/w downloaded from: http:///

2 www.irf.com s d g s d g repetitive rating; pulse width limited bymax. junction temperature. (see fig. 11). this value determined from sample failurepopulation
starting t j = 25c, l=0.043mh, r g = 25 ? , i as = 140a,v gs =10v. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint andsoldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. solder mounted on ims substrate. limited by t j max starting t j = 25c, l=0.043mh, r g = 25 ? , i as = 140a,v gs =10v.part not recommended for use above this value. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e5 5C C CC C Cv ? v dss / ? t j breakdown volta g e temp. coefficient CCC 0.05 CCC v/c r ds(on) smd static drain-to-source on-resistance CCC 2.0 2.6 m ? v gs(th) gate threshold volta g e2 . 0 C C C 4 . 0 v g fs forward transconductance 110 CCC CCC s i dss drain-to-source leaka g e current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leaka g e CCC CCC 200 gate-to-source reverse leaka g e CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e CCC 130 200 q gs gate-to-source char g eC C C 5 3 C C C q gd gate-to-drain ("miller") char g eC C C 4 9 C C C t d(on) turn-on dela y time CCC23CCC t r rise time CCC 130 CCC t d(off) turn-off dela y time CCC80CCC t f fall time CCC52CCC l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from packa g e and center of die contact c iss input capacitance CCC 7820 CCC c oss output capacitance CCC 1260 CCC c rss reverse transfer capacitance CCC 610 CCC c oss output capacitance CCC 4310 CCC c oss output capacitance CCC 980 CCC c oss eff. effective output capacitance CCC 1540 CCC diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time C C C4 56 8n s q rr reverse recover y char g e CCC 35 53 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) v ds = v gs , i d = 250a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 140a t j = 25c, i f = 140a, v dd = 28v di/dt = 100a/ s t j = 25c, i s = 140a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 10v mosfet symbol v gs = 0v v ds = 25v v gs = 0v, v ds = 44v, ? = 1.0mhz conditions v gs = 0v, v ds = 0v to 44v ? = 1.0mhz, see fig. 5 r g = 2.4 ? i d = 140a v ds = 25v, i d = 140a v dd = 28v i d = 140a v gs = 20v v gs = -20v v ds = 44v v gs = 10v conditions ana nc ns nh pf a CCC CCC CCC CCC CCC CCC CCC CCC 240 1000 4.5 7.5 downloaded from: http:///

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qualification information ? moisture sensitivity level 7l-d2 pak msl1 , 260c rohs compliant yes esd machine model class m4(+/-425v) (per aec-q101-002) human body model class h3a(+/-4000v) (per aec-q101-001) charged device model class c5 (+/-1000v) (per aec-q101-005) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 60s pulse width 0 20 40 60 80 100 120 i d ,drain-to-source current (a) 0 50 100 150 200 250 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v v ds = 40v i d = 140a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 10000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc downloaded from: http:///

6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 140a v gs = 10v 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0794 0.0001920.1474 0.000628 0.2737 0.014012 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///

www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 500 1000 1500 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 21a 37a bottom 140a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a downloaded from: http:///

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 140a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period +

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0.1 % +++ + - fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:///

10 www.irf.com d 2 pak - 7 pin package outline dimensions are shown in millimeters (inches) d 2 pak - 7 pin part marking information %
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www.irf.com 11 to-263ca 7 pin long leads package outlinedimensions are shown in millimeters (inches) to-263ca - 7 pin part marking information %
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12 www.irf.com d 2 pak - 7 pin tape and reel downloaded from: http:///

www.irf.com 13 ordering information base p art packa g e t yp e standard pac k com p lete part number form quantit y AUIRF3805L-7P to-262 tube 50 AUIRF3805L-7P auirf3805s-7p d2pak tube 50 auirf3805s-7p tape and reel left 800 auirf3805s-7ptrl tape and reel right 800 auirf3805s-7ptrr downloaded from: http:///

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries(ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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